DocumentCode
2498479
Title
Varying strains in InAs1-xPx/InP multiple quantum well device structures
Author
Stavrinou, P. ; Haywood, S.K. ; Hart, L. ; Zhang, X. ; Hopkinson, M. ; David, J.P.R. ; Hill, G.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear
1993
fDate
19-22 Apr 1993
Firstpage
652
Lastpage
655
Abstract
The authors present room temperature photocurrent spectra for three InAs1-xPx/InP positive-intrinsic-negative (PIN) structures grown by conventional solid source molecular beam epitaxy. Using high resolution X-ray diffraction and studying the separation of the excitonic transitions in each structure indicates that the strain is coherently accommodated in all three structures, despite the large number wells. This is in good agreement with theoretical calculations. The preliminary results indicate that the heavy hole valence band offset proposed by R. P. Schneder Jr. and B. W. Wessels (1991) may also be applicable to the structures studied here
Keywords
III-V semiconductors; X-ray diffraction; indium compounds; interface states; internal stresses; photoconductivity; semiconductor quantum wells; semiconductor superlattices; valence bands; 20 degC; InAs1-xPx/InP multiple quantum well device structures; InAsP-InP; excitonic transitions; heavy hole valence band offset; high resolution X-ray diffraction; room temperature photocurrent spectra; solid source molecular beam epitaxy; strain; Capacitive sensors; Electrons; Indium phosphide; Optical device fabrication; Optical devices; Photoconductivity; Photoluminescence; Photonic band gap; Quantum well devices; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380610
Filename
380610
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