Title :
Large area InGaAs MSM photodetectors
Author :
Hieronymi, F. ; Bottcher, E.H. ; Drö, E. ; Kuhl, D. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphysik, Tech. Univ. Berlin, Germany
Abstract :
The authors report on high-performance InGaAs metal-semiconductor-metal (MSM) photodetectors for large area applications. Fe-doping was employed to obtain the high-resistivity InGaAs:Fe photoactive layer and the InP:Fe Schottky-barrier enhancement layer. The fabricated interdigitated MSM detectors have an active area of 350 μm × 350 μm. At typical operating bias of 10 V, a capacitance of 1.6 pF and almost 1 GHz electrical bandwidth was achieved. The devices are very attractive for large area photoreceivers since they consume high-sensitivity and large-bandwidth operation due to low capacitive loading
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; iron; metal-semiconductor-metal structures; photodetectors; 1 GHz; 1.6 pF; 10 V; 350 micron; Fe-doping; InGaAs MSM photodetectors; InGaAs:Fe-InP:Fe; InP:Fe Schottky-barrier enhancement layer; capacitance; electrical bandwidth; high-performance InGaAs metal-semiconductor-metal (MSM) photodetectors; high-resistivity InGaAs:Fe photoactive layer; high-sensitivity; interdigitated MSM detectors; large area applications; large area photoreceivers; large-bandwidth operation; low capacitive loading; Bandwidth; Bonding; Capacitance; Detectors; Fingers; High speed optical techniques; Indium gallium arsenide; Optical buffering; Optical surface waves; Photodetectors;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380617
