Generation and detection of 13 ps Q-switched pulses from a 1.3μm semiconductor laser containing a saturable absorber

Author

Laughton, Frances R. ; Barrow, David A. ; Marsh, John H. ; Portnoi, Hfim L.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1993

fDate

19-22 Apr 1993

Firstpage

624

Lastpage

626

Abstract

The authors report Q-switching of a InGaAsP/InP laser in which a saturable absorber is formed by implantation of heavy ions into the facets. The generation of high peak power picosecond at 1.3 μm from a InGaAsP/InP semiconductor laser is reported for the first time. A novel sensitive two-photon absorption waveguide autocorrelator was used to confirm that the pulse length was 13 ps. The pulse energy of the laser was 12 pJ, from which the peak power of the laser was calculated to be 1 W

Keywords

III-V semiconductors; Q-switching; gallium arsenide; gallium compounds; indium compounds; ion implantation; optical modulation; optical saturable absorption; semiconductor lasers; 1 W; 1.3 micron; 12 pJ; 13 ps; GaInAsP-InP; InGaAsP/InP laser; Q-switched pulses; Q-switching; facets; heavy ions; high peak power picosecond pulses; implantation; peak power; pulse energy; pulse length; saturable absorber; semiconductor laser; sensitive two-photon absorption waveguide autocorrelator; Absorption; Face detection; Indium phosphide; Optical pulse generation; Power generation; Power lasers; Pulse generation; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380618

Filename

380618