Title :
Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays
Author :
Pogany, D. ; Ababou, S. ; Guillot, G.
Author_Institution :
URA CNRS, INSA-Lyon, Villeurbanne, France
Abstract :
A systematical study of physical mechanisms which control both the low frequency noise (LFN) and current in good and failed lattice-mismatched InP/InxGa1-xAs/InP photodetectors has been performed. It has been shown that the LFN in lattice-mismatched InP/InGaAs/InP photodetectors results from the fluctuation of the excess leakage current which flows through localized leakage sites at the p-n junction. Results are analyzed in terms of influence of both material and technological defects. A hypothesis about the bulk or surface origin of the LFN is discussed in detail
Keywords :
III-V semiconductors; arrays; current fluctuations; gallium arsenide; indium compounds; leakage currents; photodetectors; semiconductor device noise; InP-InGaAs-InP; current characterization; excess leakage current; lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays; localized leakage sites; low frequency noise; material defects; p-n junction; physical mechanisms; technological defects; Background noise; Current measurement; Diodes; Fluctuations; Indium gallium arsenide; Indium phosphide; Leakage current; Noise generators; Photodetectors; Photodiodes;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380621
