Title :
Low threshold current GaInAs/GaAs single quantum well lasers with GaInP cladding layers
Author :
Martins, R.B. ; Bernussi, A.A. ; Machado, A.M.
Author_Institution :
CPQD-TELEBRAS, Campinas, Brazil
Abstract :
Strained-layer GaInAs/GaAs/GaInP single quantum well separate confinement heterostructure lasers emitting at 980nm are reported. Broad area and ridge waveguide uncoated lasers showed threshold current as low as 11mA and external differential quantum efficiency of 65%. Far field patterns exhibited fundamental transverse mode operation with divergence of 10.5° and 20° for directions parallel and perpendicular to the junction plane, respectively
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; quantum well lasers; waveguide lasers; 11 mA; 65 percent; 980 nm; GaInAs-GaAs-GaInP; GaInAs/GaAs single quantum well lasers; GaInAs/GaAs/GaInP single quantum well separate confinement heterostructure lasers; GaInP cladding layers; external differential quantum efficiency; far field patterns; fundamental transverse mode operation; low threshold current; ridge waveguide uncoated lasers; strained layer lasers; threshold current; Chemicals; Gallium arsenide; Health and safety; Laser modes; Optical pulses; Optical waveguides; Quantum well lasers; Refractive index; Threshold current; Variable speed drives;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380622
