Title :
Continued study of the photo-injection annealing of thermally diffused InP solar cells
Author :
Walters, R.J. ; Shaw, G.J. ; Summers, G.P. ; Messenger, S.R.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
The authors present more results on the photo-injection annealing of irradiated diffused junction cells. Dark IV measurements were incorporated into the experiments, and the changes in the diffusion and recombination currents in the cell junction due to the irradiation and annealing were measured along with the corresponding changes in the illuminated IV curves and deep level transient spectra. Also, the results of thermal annealing in the dark are included to further investigate the annealing of Voc and the H5 defect. The effect of different base dopant concentrations on the annealing of H5 is presented as well. These additional data allow for a more detailed description of the annealing of these cells. The results are a more complete model of the mechanism of the radiation response of the diffused junction solar cells
Keywords :
III-V semiconductors; annealing; deep level transient spectroscopy; indium compounds; semiconductor doping; solar cells; H5 defect; annealing; base dopant concentrations; cell junction; dark I-V measurements; deep level transient spectra; diffusion currents; illuminated IV curves; irradiated diffused junction cells; irradiation; photo-injection annealing; radiation response; recombination currents; thermal annealing; thermally diffused InP solar cells; Annealing; Displays; Indium phosphide; Laboratories; Lighting; MOCVD; Photovoltaic cells; Temperature; Thermal degradation; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380623
