InAlAs/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy (CBE)

Author

Cowles, J.C. ; Chen, W.L. ; Munns, G.O. ; Haddad, G.I.

Author_Institution

Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

385

Lastpage

388

Abstract

The authors report an InAlAs/InGaAs heterojunction bipolar transistor (HBT) with an InP etch-stop layer grown entirely by chemical beam epitaxy (CBE). CBE has demonstrated the ability to grow these HBTs in a single, uninterrupted growth sequence. The devices demonstrated uniform DC characteristics that were insensitive to device geometry and perimeter effects. The offset voltage and current ideality factors indicated that rather complex injection mechanisms are occurring in the base-emitter junction. RF performance was limited by parasitic RC charging times and by the transit-time through the thick base-collector depletion region

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; CBE; HBT; InAlAs-InGaAs; InP etch-stop layer; RF performance; base-emitter junction; complex injection mechanisms; current ideality factors; offset voltage; parasitic RC charging times; semiconductors; thick base-collector depletion region; uniform DC characteristics; uninterrupted growth sequence; Chemicals; Epitaxial growth; Etching; Geometry; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380628

Filename

380628