Title :
InAlAs/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy (CBE)
Author :
Cowles, J.C. ; Chen, W.L. ; Munns, G.O. ; Haddad, G.I.
Author_Institution :
Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
Abstract :
The authors report an InAlAs/InGaAs heterojunction bipolar transistor (HBT) with an InP etch-stop layer grown entirely by chemical beam epitaxy (CBE). CBE has demonstrated the ability to grow these HBTs in a single, uninterrupted growth sequence. The devices demonstrated uniform DC characteristics that were insensitive to device geometry and perimeter effects. The offset voltage and current ideality factors indicated that rather complex injection mechanisms are occurring in the base-emitter junction. RF performance was limited by parasitic RC charging times and by the transit-time through the thick base-collector depletion region
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; CBE; HBT; InAlAs-InGaAs; InP etch-stop layer; RF performance; base-emitter junction; complex injection mechanisms; current ideality factors; offset voltage; parasitic RC charging times; semiconductors; thick base-collector depletion region; uniform DC characteristics; uninterrupted growth sequence; Chemicals; Epitaxial growth; Etching; Geometry; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380628
