Transport of electrons in the near-surface region of InP

Summary form only given. To study surface-related scattering mechanisms in InP the authors have fabricated and characterized enhancement mode metal-insulator-semiconductor FETs (MISFETs) on commercially available SI material as well as accumulation mode devices on n-type gas source molecular beam epitaxy grown epitaxial n-type material. In all cases the gate insulator was SiO₂ deposited by low-pressure, indirect plasma enhanced chemical vapor deposition over the temperature range from ~175 to 275K. Experimental results obtained on both types of FET have included field effect and effective mobility values measured as a function of channel carrier density and temperature, over the range from ~77 to 300 K, and as a function of dielectric growth temperature. To elucidate the dominant scattering mechanisms in these devices, the surface transport was modeled by including, in addition to the standard bulk scattering processes, the effects of surface roughness, interfacial charge, and neutral surface impurity scattering. The results of surface mobility studies are presented, including the fitting of the experimental mobility data to the theory