GSMBE single step epitaxy of pseudo buried heterostructure laser

Author

Loualiche, S. ; Le Corre, A. ; Vaudry, C. ; Henry, L. ; Clerot, F.

Author_Institution

France Telecom, Lannion, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

372

Lastpage

374

Abstract

A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si_xN_y was used as a device lateral guiding layer. The SiN optical index is the same as InP and its optical loss and leakage current at 2V are lower than 100 cm^-1 and 100 nA respectively. The device threshold current and efficiency are 30 mA and 0.2 W/A

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; sputter etching; 30 mA; GaInAsP; SiN; SiN lateral guiding layer; efficiency; gas source MBE; pseudo buried heterostructure laser; reactive ion etching; self-aligned technology; semiconductor; single step epitaxy; threshold current; Dielectric devices; Epitaxial growth; Etching; Indium phosphide; Leakage current; Molecular beam epitaxial growth; Optical losses; Particle beam optics; Silicon compounds; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380632

Filename

380632