Gas phase polysulfide passivation of InP for MISFET fabrication

Author

Kwok, R.W.M. ; Lau, W.M. ; Landheer, D. ; Ingrey, S.

Author_Institution

Dept. of Mater. Eng., Univ. of Western Ontario, London, Ont., Canada

fYear

1993

fDate

19-22 Apr 1993

Firstpage

369

Lastpage

371

Abstract

Gas phase polysulfide passivation of InP was studied and used to improve the electrical properties of metal-insulator-semiconductor structures and metal-insulator-semiconductor field effect transistors (MISFETs). The gas phase polysulfide treatment was used successfully to reduce the interface state density of silicon nitride/InP. MISFETs with a slow drain current drift were fabricated. The results indicate that both depletion mode and accumulation-depletion mode InP MISFETs can be fabricated with a useful drain current

Keywords

III-V semiconductors; MISFET; indium compounds; interface states; passivation; semiconductor technology; InP; MISFET; accumulation-depletion mode; depletion mode; drain current drift; gas phase polysulfide treatment; interface state density; passivation; semiconductor; Fabrication; Hafnium; Indium phosphide; MISFETs; Nitrogen; Passivation; Rapid thermal annealing; Silicon; Surface cleaning; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380633

Filename

380633

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2498870