Epitaxially lifted-off GaAs MESFETs on InP for optoelectronic integration

Author

Pollentier, I. ; Brys, C. ; Debie, P. ; Coppoolse, R. ; Martens, L. ; Vandewege, J. ; Van Daele, P. ; Demeester, P.

Author_Institution

Lab. of Electromagn. & Acoust., Gent Univ., Belgium

fYear

1993

fDate

19-22 Apr 1993

Firstpage

365

Lastpage

368

Abstract

Epitaxial lift-off (ELO) is a technique by which epitaxially grown layers are lifted off their growth substrate and subsequently reattached to a new one. The preprocessing approach where ELO devices and circuits on the host are fabricated before transplantation offers the advantages that (a) fully optimized devices provided by a foundry service can be combined, (b) the devices can be tested prior to transplantation, and (c) the final result is a monolithic integration. The authors present results on the transplantation of foundry MESFETs to InP, and compare their behavior and the extracted parameters for a nonlinear MESFET-model before and after transfer

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; gallium arsenide; integrated circuit technology; integrated optoelectronics; semiconductor process modelling; GaAs; InP; MESFET; epitaxial lift-off; monolithic integration; optoelectronic integration; semiconductors; Bonding; Circuit testing; Fabrication; Foundries; Gallium arsenide; Indium phosphide; MESFETs; Monolithic integrated circuits; Substrates; Water pollution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380634

Filename

380634