• DocumentCode
    2498947
  • Title

    MeV ion implantation for electrical isolation of p+ InP epi-layers

  • Author

    Ridgway, M.C. ; Davies, M. ; Sedivy, J.Z. ; Vandenberg, R. ; Rolfe, S.J. ; Jackman, T.E.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    357
  • Lastpage
    360
  • Abstract
    Electrical isolation of p+-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species, sheet resistance (Rs) values of 5-8 × 106 Ω/square were attained after post-implant annealing at temperatures between 300-400°C. Rs values were relatively insensitive to ion dose varying by one order of magnitude for an ion dose range of three orders of magnitude. Fe diffusion was apparent at an annealing temperature of 800°C
  • Keywords
    III-V semiconductors; annealing; boron; diffusion; electric resistance; indium compounds; ion implantation; iron; isolation technology; oxygen; semiconductor doping; semiconductor epitaxial layers; InP:B; InP:Fe; InP:O; annealing; diffusion; electrical isolation; ion implantation; p+ epitaxial layers; semiconductor; sheet resistance; Annealing; Electrical resistance measurement; Etching; Implants; Indium phosphide; Ion implantation; Iron; Optical device fabrication; Temperature distribution; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380636
  • Filename
    380636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2498947