• DocumentCode
    2499071
  • Title

    Fe and Ti compensation implants into n- and p- In0.52Al 0.48A and p- InP

  • Author

    Martin, J.M. ; Rao, M.V. ; Boos, J.B. ; Holland, O.W.

  • Author_Institution
    George Mason Univ., Fairfax, VA, USA
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    341
  • Lastpage
    344
  • Abstract
    Fe and Ti implantations were performed into n- and p- type InAlAs, respectively. Fe implants suffered a strong out-diffusion during annealing, whereas Ti implants showed only a slight in- and out- diffusion. The crystalline quality of the annealed material was very close to that of the virgin un-implanted sample, and resistivities higher than 106 Ω-cm were obtained. MeV Ti implantations were performed into p-type InP. The Ti implant profiles showed almost no redistribution during annealing and the material had good crystalline quality after annealing. Resistivities near the intrinsic limit for InP were obtained
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; diffusion; doping profiles; electrical resistivity; indium compounds; ion implantation; iron; semiconductor doping; titanium; In0.52Al0.48As:Fe; In0.52Al0.48As:Ti; InP:Ti; annealing; compensation implants; crystalline quality; implant profiles; in-diffusion; out-diffusion; resistivity; semiconductors; Annealing; Atomic measurements; Conductivity; Implants; Indium compounds; Indium phosphide; Iron; Laboratories; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380640
  • Filename
    380640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2499071