• DocumentCode
    2499160
  • Title

    Charge transfer phenomena in semi-insulating InP:Fe

  • Author

    Wittmann, G. ; Fasbender, R. ; Thoms, M. ; Winnacker, A.

  • Author_Institution
    Inst. for Mater. Sci., Univ. of Erlangen, Germany
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    325
  • Lastpage
    328
  • Abstract
    Charge transfer phenomena are studied in semi-insulating InP:Fe. It is shown that the Fe-absorption is changed under exposure to near IR-light due to pumping of charge carriers into traps other than Fe. This process may affect the determination of the Fe-distribution in InP:Fe by optical absorption. From the change in Fe-absorption the absolute concentration of traps can be estimated. The spectral dependence of the charge transfer process reveals that mainly electron traps are active above 80K
  • Keywords
    III-V semiconductors; absorption coefficients; electron traps; impurity absorption spectra; indium compounds; infrared spectra; iron; light absorption; Fe-absorption; Fe-distribution; IR absorption; InP:Fe; charge transfer; electron traps; semi-insulating; semiconductor; trap concentration; Absorption; Charge carrier processes; Charge carriers; Charge transfer; Electron optics; Electron traps; Indium phosphide; Ionization; Iron; Optical pumping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380644
  • Filename
    380644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2499160