DocumentCode
2499269
Title
Growth and properties of InGaAs ternary bulk crystals
Author
Nakajima, K. ; Kusunoki, T. ; Kitahara, K. ; Ishikawa, H.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1993
fDate
19-22 Apr 1993
Firstpage
305
Lastpage
308
Abstract
The authors have developed a double crucible liquid encapsulated Czochralski (LEC) method with a continuous supply of solute elements. The controllability of the supply of solute elements can be improved by this method. A 5 cm long InGaAs ternary bulk crystal has been grown at a constant temperature by the LEC method with a supply of only GaAs to growth melt. The X-ray, electrical and optical results imply that the quality of the InGaAs bulk crystals is as high as the LEC grown GaAs crystals on the market
Keywords
III-V semiconductors; X-ray diffraction; crystal growth from melt; electrical resistivity; gallium compounds; indium compounds; photoluminescence; semiconductor growth; InGaAs; X-ray diffraction; double crucible liquid encapsulated Czochralski growth; photoluminescence; resistivity; semiconductor; ternary bulk crystals; Capacitive sensors; Cooling; Crystalline materials; Crystals; Gallium arsenide; Indium gallium arsenide; Laboratories; Lattices; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380649
Filename
380649
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