Title :
Evaporated thin silicon interlayers for indium phosphide device applications
Author :
Dauplaise, H.M. ; Lorenzo, J.P. ; Martin, E.A. ; Vaccaro, K. ; Ramseyer, G.O.
Author_Institution :
Rome Lab., Hanscom AFB, MA, USA
Abstract :
The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition
Keywords :
III-V semiconductors; X-ray photoelectron spectra; elemental semiconductors; indium compounds; interface states; semiconductor heterojunctions; semiconductor thin films; silicon; InP; Si interlayers; X-ray photoelectron spectroscopy; flat band voltage shift; interface state density; semiconductor; Chemical analysis; Dielectric substrates; Dielectrics and electrical insulation; Indium phosphide; Interface states; Laboratories; MISFETs; Optical films; Silicon compounds; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380652
