Title :
High performance InGaAs/InP JFETs with step-doped channel doping for OEIC receivers
Author :
Blaser, M. ; Bauknecht, R. ; Melchior, H.
Author_Institution :
Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 μA/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; semiconductor device noise; semiconductor doping; 11.6 GHz; InGaAs-InP; InGaAs/InP JFETs; OEIC receivers; excess noise factor; gate leakage currents; gate length; optoelectronic integrated circuit; semiconductor; step-doped channel doping; transconductances; transit frequencies; Application specific integrated circuits; Doping; FET integrated circuits; Frequency; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; JFETs; Leakage current; Optoelectronic devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380654
