Title :
Multichannel MSM-HEMT receiver OEICs for WDM networks
Author :
Hong, W.P. ; Chang, G.K. ; Bhat, R. ; Hayes, J.R.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The authors have demonstrated a monolithically integrated multichannel receiver optoelectronic integrated circuit (OEIC) for wavelength-division-multiplexing (WDM) applications. The OEIC is based on a InAlAs/InGaAs metal-semiconductor-metal (MSM) detector and high-electron-mobility-transistor (HEMT) device technologies. The response characteristics of the OEIC were measured by sweeping all four channels using a 1.3 μm laser diode of known frequency response. A uniform frequency response was measured with each channel having a -3 dB bandwidth of 1.3 GHz. The sensitivity was -25.2 dBm at 1.2 Gb/s for a bit-error-rate of 10-9. The high sensitivity and high-speed operation is attributed to the low-capacitance MSM detector and the high-performance HEMT devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; semiconductor heterojunctions; wavelength division multiplexing; 1.3 GHz; 1.3 micron; InAlAs-InGaAs; InAlAs/InGaAs; MSM-HEMT receiver; high sensitivity; high-electron-mobility-transistor; high-speed operation; monolithically integrated multichannel receiver optoelectronic integrated circuit; semiconductor; uniform frequency response; wavelength-division-multiplexing; Application specific integrated circuits; Detectors; Frequency measurement; Frequency response; HEMTs; Monolithic integrated circuits; Optoelectronic devices; WDM networks; Wavelength division multiplexing; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380657
