Title :
Evaluation of InP Epi-ready wafers for epitaxial growth
Author :
Overs, A. ; Jacob, G. ; Besland, M.P. ; Drouot, V. ; Gendry, M. ; Hollinger, G. ; Gauneau, M. ; Lecrosnier, D. ; Benchimol, J.L.
Author_Institution :
Crismatec-InPact, Moutiers, France
Abstract :
The authors report on new X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) characterization results obtained on Epi-ready InP wafers as prepared with an optimized process and then stored in air for more than six months. They present a simplified molecular beam epitaxy oxide desorption procedure adapted to the new products. The quality of this procedure is demonstrated by the high performance of InAlAs/InGaAs high electron mobility transistor structures. The properties of the epitaxial structures prepared with different growth techniques are evaluated on the basis of secondary ion mass spectrometry results for residual impurities at epilayer-substrate interfaces
Keywords :
III-V semiconductors; X-ray photoelectron spectra; atomic force microscopy; chemical beam epitaxial growth; indium compounds; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; InP; InP Epi-ready wafers; X-ray photoelectron spectroscopy; atomic force microscopy; epilayer-substrate interfaces; epitaxial growth; high electron mobility transistor structures; molecular beam epitaxy oxide desorption procedure; residual impurities; secondary ion mass spectrometry; semiconductor; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoelectron microscopy; Spectroscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380659
