DocumentCode
2499458
Title
In situ characterization of MOCVD growth
Author
Epler, J.E. ; Schweizer, H.P. ; Jung, T.A.
Author_Institution
Paul Scherrer Inst., Zurich, Switzerland
fYear
1993
fDate
19-22 Apr 1993
Firstpage
259
Lastpage
262
Abstract
In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data
Keywords
CVD coatings; III-V semiconductors; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; interface structure; light scattering; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; surface topography; vapour phase epitaxial growth; GaAs; InP-InGaAsP; MOCVD growth; atomic force microscopy images; atomic terrace; elastic light scattering; epitaxial layers; interface included roughness; semiconductor; topography; Annealing; Atomic force microscopy; Atomic measurements; Gallium arsenide; Indium phosphide; Light scattering; MOCVD; Substrates; Surface topography; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380661
Filename
380661
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