Title :
In situ characterization of MOCVD growth
Author :
Epler, J.E. ; Schweizer, H.P. ; Jung, T.A.
Author_Institution :
Paul Scherrer Inst., Zurich, Switzerland
Abstract :
In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data
Keywords :
CVD coatings; III-V semiconductors; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; interface structure; light scattering; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; surface topography; vapour phase epitaxial growth; GaAs; InP-InGaAsP; MOCVD growth; atomic force microscopy images; atomic terrace; elastic light scattering; epitaxial layers; interface included roughness; semiconductor; topography; Annealing; Atomic force microscopy; Atomic measurements; Gallium arsenide; Indium phosphide; Light scattering; MOCVD; Substrates; Surface topography; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380661
