Title :
Characterization of impact-ionization in InAlAs/InGaAs/InP HEMT structures using a novel photocurrent-measurement technique
Author :
Heedt, C. ; Buchali, F. ; Prost, W. ; Fritzsche, D. ; Nickel, H. ; Tegude, F.J.
Author_Institution :
Univ.-GH-Duisburg, Germany
Abstract :
A detailed analysis of the gate-leakage current in InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structures is carried out. The different leakage contributions are studied experimentally and theoretically for the evaluation of an optimized layer structure to be used in low-noise optical receivers. The focus is on the additional gate-leakage current due to impact-ionization in the small-bandgap channel material. To reduce the gate-leakage caused by impact-ionization the authors introduced a strained In0.1Al 0.9As layer within the spacer layer section of a conventional HEMT layer structure. To demonstrate the efficiency of this hole-barrier a photocurrent measurement technique was employed. Using this novel layer structure, a drastic reduction of gate leakage near pinch off bias was achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; semiconductor device noise; semiconductor heterojunctions; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMT structures; gate leakage near pinch off bias; gate-leakage current; high electron mobility transistor; impact-ionization; low-noise optical receivers; optimized layer structure; photocurrent-measurement technique; semiconductor; Gate leakage; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Measurement techniques; Optical materials; Optical receivers; Photoconductivity;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380664
