High quality long wavelength lasers grown by atmospheric pressure MOCVD with liquid group V sources

The authors have achieved low threshold In_xGa_1-x As/InP quantum well laser diodes, grown in a non-hydride metalorganic chemical vapor deposition system at atmospheric pressure using tertiarybutylarsine and tertiarybutylphosphine. Broad area laser diodes, emitting at 1.3 μm, with a 1500 Å GaInAsP active region achieved threshold current densities of 1.25 kA/cm² for 400 micron cavity length. Strained and unstrained quantum wells with luminescence at 1.55 μm have been incorporated into the active regions of laser diodes. Lattice matched In_0.53Ga_0.47 As/InP single quantum well lasers exhibited extremely low threshold current densities of 220 A/cm² for broad area devices 3.5 mm in cavity length. Compressively strained 4 quantum wells devices displayed excellent threshold current densities of 300 A/cm² for 3 mm cavity lengths