Title :
Experiment-based projected high efficiency thermally diffused p+n (Cd,S) InP solar cells for space applications
Author :
Faur, M. ; Faur, M. ; Flood, D.J. ; Brinker, D.J. ; Goradia, C. ; Goradia, M. ; Weinberg, I. ; Fatemi, Navid
Author_Institution :
Dept. of Electr. Eng., Cleveland State Univ., OH, USA
Abstract :
By drastically reducing the defect densities of p+n (Cd,S) InP diffused structures the authors have succeeded in fabricating p+n InP solar cells with measured AM0, 25°C V∝ values exceeding 880 mV, without anti-reflection (AR) coating. Experiment-based projected maximum achievable AM0, 25°C efficiency of these cells is 21.3%. Preliminary investigation of the performance parameters of p+n (Cd,S) InP structures and solar cells after irradiation with 1013 cm-2 3MeV protons indicate higher radiation tolerance of this configuration as compared to n+ p InP configuration due to its better annealing properties
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; indium compounds; p-n heterojunctions; proton effects; solar cells; 21.3 percent; 25 degC; 880 mV; CdS-InP; higher radiation tolerance; p+n InP solar cells; performance parameters; proton irradiation; semiconductor; space applications; Coatings; Density measurement; Epitaxial growth; Etching; Indium phosphide; Photovoltaic cells; Pollution measurement; Surface contamination; Surface resistance; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380671
