• DocumentCode
    2499668
  • Title

    1kW GaN S band radar transistor

  • Author

    Walker, Julian ; Formicone, Gabriele ; Boueri, Fouad ; Battaglia, Brian

  • Author_Institution
    Integra Technol., Inc., El Segundo, CA, USA
  • fYear
    2013
  • fDate
    21-23 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes a GaN transistor with 1kW output power for S band radar and other applications. This is believed to be the highest power ever reported from a single-ended transistor at this frequency and is a threefold improvement on the previous best.
  • Keywords
    III-V semiconductors; UHF transistors; gallium compounds; microwave transistors; radar; GaN; GaN transistor; S band radar; power 1 kW; single-ended transistor; Gain; Gallium nitride; Logic gates; Power generation; Radar; Silicon; Transistors; GaN; S band; radar; transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on
  • Conference_Location
    Tel Aviv
  • Type

    conf

  • DOI
    10.1109/COMCAS.2013.6685249
  • Filename
    6685249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2499668