DocumentCode :
2499759
Title :
A 12-Bit high-speed ADC based on GeSi BiCMOS process
Author :
Li, Liang ; Huang, Xingfa ; Xu, MingYuan
Author_Institution :
Nat. Key Labs. of Analog ICs, Chongqing, China
fYear :
2011
fDate :
24-26 June 2011
Firstpage :
146
Lastpage :
149
Abstract :
In this paper, a 7 stage switched capacitor pipelined ADC is described. This ADC is designed to achieve 12-bit resolution at the speed up to 125MSPS, which uses a fully differential switched capacitor pipelined architecture. This ADC includes an input broadband buffer, which isolates the ADC from external driver circuit, a high performance sample-and-hold amplifier (SHA) front end, and 7 pipelined sub-ADC stages to achieve 12-bit accuracy. A double poly triple metal 0.35μm GeSi BiCMOS process with 5V analog power supply is used in the design. This ADC achieves an SNR of 66dB and an SFDR of 80dB for sampling analog input frequencies up to 50MHz.
Keywords :
BiCMOS integrated circuits; analogue-digital conversion; sample and hold circuits; 12-bit high speed ADC; 7 stage switched capacitor pipelined ADC; GeSi BiCMOS process; SNR; analog power supply; external driver circuit; fully differential switched capacitor pipelined architecture; input broadband buffer; sample-and-hold amplifier front end; BiCMOS integrated circuits; Capacitors; Clocks; Copper; Switches; DEM; SHA; Trimming; switched capacitor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Anti-Counterfeiting, Security and Identification (ASID), 2011 IEEE International Conference on
Conference_Location :
Xiamen
ISSN :
Pending
Print_ISBN :
978-1-61284-631-6
Type :
conf
DOI :
10.1109/ASID.2011.5967437
Filename :
5967437
Link To Document :
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