DocumentCode :
2499774
Title :
Phase optimisation of PMN-PT thin films deposited by Pulsed Laser Deposition on MgO substrates and Pt-coated silicon
Author :
Bui-thi, Kim-Anh ; Lecoeur, Philippe ; Pham-thi, Mai ; Garry, Guy
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ Paris-Sud, Orsay, France
fYear :
2010
fDate :
9-12 Aug. 2010
Firstpage :
1
Lastpage :
4
Abstract :
Stability and crystalline quality of PMN-PT (65/35) thin films deposited by Pulsed Laser Deposition on MgO <;001>; and MgO <;111>; are studied by X-Ray diffraction and Raman Scattering Spectroscopy. From these investigations, the stabilization of PMN-PT films on <;111>; Pt-coated silicon substrate is obtained by the integration of an oxide layer (La0.66Sr0.33MnO3) on the Pt surface prior to the PMN-PT deposition. Physical properties are found to be very robust with a polarization up to 40μC/cm2 for an electric field as high as 1MV/cm.
Keywords :
Raman spectra; X-ray diffraction; dielectric polarisation; ferroelectric thin films; lead compounds; magnesium compounds; pulsed laser deposition; relaxor ferroelectrics; PbMn0.33Nb0.67O-PbTiO3; Raman scattering spectroscopy; X-ray diffraction; phase optimisation; physical properties; pulsed laser deposition; thin films; Buffer layers; Metals; Raman scattering; Silicon; Substrates; X-ray diffraction; PMN-PT thin films; Raman Scattering Spectroscopy; ferroelectrics; oxide layer; pyrochlores;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics (ISAF), 2010 IEEE International Symposium on the
Conference_Location :
Edinburgh
ISSN :
1099-4734
Print_ISBN :
978-1-4244-8190-3
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2010.5712245
Filename :
5712245
Link To Document :
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