Title :
Limits of strain compensation in MQW InGaAsP/InP 1.5 μm lasers
Author :
Houghton, D.C. ; Davies, M. ; Dion, M.
Author_Institution :
Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
The authors consider strain compensation for typical multiple quantum well (MQW) laser structures using an energy balance model and determine the theoretical limitations of structural stability based on uncompensated reliability data from the literature. Strain compensation is the technique used to balance tensile and compressive forces in alternating layers to render the stack strain neutral. Strain compensation must be given careful consideration in the design and synthesis of strain neutral structures. Strain compensation holds the promise of reduced defect densities with enhanced stability and should permit very highly strained QW optoelectronic devices to be fabricated which are predicted to have considerably enhanced performance and reliability
Keywords :
III-V semiconductors; compressibility; deformation; gallium arsenide; indium compounds; quantum well lasers; 1.5 micron; InGaAsP-InP; compressive forces; defect densities; energy balance model; multiple quantum well laser structures; optoelectronic devices; strain compensation; structural stability; Capacitive sensors; Indium phosphide; Laser modes; Laser stability; Laser theory; Quantum mechanics; Quantum well devices; Quantum well lasers; Structural engineering; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380678