DocumentCode
2499897
Title
MOCVD growth of InP by phosphine modulation
Author
Lee, M.K. ; Hu, C.C. ; Lin, M.H.
Author_Institution
Inst. of Electr. Eng., Nat. Sun Yat-sen Univ., Koashing, Taiwan
fYear
1993
fDate
19-22 Apr 1993
Firstpage
171
Lastpage
174
Abstract
A new epitaxial growth process was developed using phosphine modulation using conventional metal-organic chemical vapor deposition (MOCVD). With this method, phosphine was switched off a short time in each cycle and provided a metal-rich growth surface. With higher surface mobility of indium atoms than that of InP molecules, crystal quality was improved significantly. Photoluminescence full width at half maximum of 5.6 meV at 77 K was achieved under optimum growth conditions
Keywords
III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; vapour phase epitaxial growth; 77 K; InP; atom surface mobility; epitaxial growth; metal-organic chemical vapor deposition; phosphine modulation; photoluminescence; Atomic beams; Chemical vapor deposition; Epitaxial growth; Indium phosphide; Inductors; MOCVD; Photoluminescence; Rough surfaces; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380682
Filename
380682
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