Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures

Author

David, J.P.R. ; Hopkinson, M. ; Hill, G. ; Stavrinou, P. ; Haywood, S.K.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK

fYear

1993

fDate

19-22 Apr 1993

Firstpage

167

Lastpage

170

Abstract

The authors report the growth of InAs_xP_1-x/InP single quantum wells and multiple quantum well positive-intrinsic-negative (PIN) diodes by solid-source molecular beam epitaxy and describe their optical and electrical properties. The results show that these structures are of a comparable quality to that of other pseudomorphic systems such as InGaAs/GaAs and cover the important wavelength range 1.0μm to 1.6μm. Devices fabricated from these structures show low leakage characteristics suggesting that they will be suitable for optoelectronic devices

Keywords

III-V semiconductors; electrical conductivity; indium compounds; optical properties; optoelectronic devices; p-i-n diodes; semiconductor growth; semiconductor quantum wells; solid phase epitaxial growth; 1 to 1.6 micron; InAsP-InP; PIN diode structures; electrical properties; leakage characteristics; optical properties; optoelectronic devices; quantum wells; solid-source molecular beam epitaxy; Epitaxial growth; III-V semiconductor materials; Indium phosphide; Molecular beam epitaxial growth; Optical modulation; Position measurement; Quantum well devices; Solids; Temperature; Valves;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380683

Filename

380683