Title :
Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures
Author :
David, J.P.R. ; Hopkinson, M. ; Hill, G. ; Stavrinou, P. ; Haywood, S.K.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Abstract :
The authors report the growth of InAsxP1-x/InP single quantum wells and multiple quantum well positive-intrinsic-negative (PIN) diodes by solid-source molecular beam epitaxy and describe their optical and electrical properties. The results show that these structures are of a comparable quality to that of other pseudomorphic systems such as InGaAs/GaAs and cover the important wavelength range 1.0μm to 1.6μm. Devices fabricated from these structures show low leakage characteristics suggesting that they will be suitable for optoelectronic devices
Keywords :
III-V semiconductors; electrical conductivity; indium compounds; optical properties; optoelectronic devices; p-i-n diodes; semiconductor growth; semiconductor quantum wells; solid phase epitaxial growth; 1 to 1.6 micron; InAsP-InP; PIN diode structures; electrical properties; leakage characteristics; optical properties; optoelectronic devices; quantum wells; solid-source molecular beam epitaxy; Epitaxial growth; III-V semiconductor materials; Indium phosphide; Molecular beam epitaxial growth; Optical modulation; Position measurement; Quantum well devices; Solids; Temperature; Valves;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380683
