A high side current sensing circuit with high PSRR based on BCD process

Author

Lin, Jianbin ; Cheng, Huihui ; Xing, Jianli

Author_Institution

Microelectron. & Solid-State Electron. Dept., Xiamen Univ., Xiamen, China

fYear

2011

fDate

24-26 June 2011

Firstpage

177

Lastpage

179

Abstract

This paper describes an instrumentation amplifier for bidirectional high-side current sensing applications. It uses an advanced high-voltage process to design. To achieve high power supply voltage, the circuit adds a current source under the amplifier. So the circuit has a wide power supply voltage range from 4V-40V, and the input common-mode voltage of the amplifier also can go beyond its supply rail. The bipolar transistors as the input stages devices reduce the offset voltage. The amplifier uses the folded-casecode structure to increase the slew rate. Finally, the design has passed by the high-voltage BCD simulation library.

Keywords

amplifiers; bipolar transistors; circuit simulation; constant current sources; BCD; PSRR; bidirectional high-side current sensing; bipolar transistors; common-mode voltage; current source; folded casecode structure; instrumentation amplifier; power supply voltage; voltage 4 V to 40 V; Instruments; MOS devices; Power supplies; Rails; Resistors; Sensors; Transistors; high side current sense; high voltage; high-PSRR; wide power supply range;

fLanguage

English

Publisher

ieee

Conference_Titel

Anti-Counterfeiting, Security and Identification (ASID), 2011 IEEE International Conference on

Conference_Location

Xiamen

ISSN

Pending

Print_ISBN

978-1-61284-631-6

Type

conf

DOI

10.1109/ASID.2011.5967445

Filename

5967445