• DocumentCode
    2499943
  • Title

    A novel sub-1-V bandgap reference in 0.18µm CMOS technology

  • Author

    Tan, Min ; Liu, Fan ; Xiang, Fei

  • Author_Institution
    Analog Integrated Circuit Design Dept., CETC, Chongqing, China
  • fYear
    2011
  • fDate
    24-26 June 2011
  • Firstpage
    180
  • Lastpage
    183
  • Abstract
    A sub-1-V bandgap reference in 0.18 μ m CMOS technology is introduced in this paper. A novel start-up circuitry and a novel low voltage amplifier are the enabling techniques for this design. The startup circuit consumes negligible power, yet guarantees the desired operating point of the bandgap reference. Transistors operating in sub-threshold region are used to enable sub-1-v operation of the low voltage amplifier. Unlike existing designs, the proposed amplifier can be implemented in CMOS technology with threshold voltage less than one VEB(on). The proposed sub-1-V bandgap reference is simulated in standard 0.18um CMOS technology. The maximum total current consumption is only 10.3uA and a temperature coefficient of 4.1ppm/°C can be achieved at 1.2V supply voltage. The minimum supply voltage is only 0.8V.
  • Keywords
    CMOS integrated circuits; low-power electronics; power amplifiers; reference circuits; transistors; CMOS technology; current 10.3 muA; current consumption; low voltage amplifier; size 0.18 mum; start-up circuitry; startup circuit; sub-1-V bandgap reference; transistors; CMOS integrated circuits; CMOS technology; Low voltage; MOSFETs; Photonic band gap; Temperature dependence; Threshold voltage; bandgap reference; low-voltage amplifier; multiple stable operating point; offset voltage; startup circuitry; sub-1-v;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Anti-Counterfeiting, Security and Identification (ASID), 2011 IEEE International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    Pending
  • Print_ISBN
    978-1-61284-631-6
  • Type

    conf

  • DOI
    10.1109/ASID.2011.5967446
  • Filename
    5967446