DocumentCode
2499943
Title
A novel sub-1-V bandgap reference in 0.18µm CMOS technology
Author
Tan, Min ; Liu, Fan ; Xiang, Fei
Author_Institution
Analog Integrated Circuit Design Dept., CETC, Chongqing, China
fYear
2011
fDate
24-26 June 2011
Firstpage
180
Lastpage
183
Abstract
A sub-1-V bandgap reference in 0.18 μ m CMOS technology is introduced in this paper. A novel start-up circuitry and a novel low voltage amplifier are the enabling techniques for this design. The startup circuit consumes negligible power, yet guarantees the desired operating point of the bandgap reference. Transistors operating in sub-threshold region are used to enable sub-1-v operation of the low voltage amplifier. Unlike existing designs, the proposed amplifier can be implemented in CMOS technology with threshold voltage less than one VEB(on). The proposed sub-1-V bandgap reference is simulated in standard 0.18um CMOS technology. The maximum total current consumption is only 10.3uA and a temperature coefficient of 4.1ppm/°C can be achieved at 1.2V supply voltage. The minimum supply voltage is only 0.8V.
Keywords
CMOS integrated circuits; low-power electronics; power amplifiers; reference circuits; transistors; CMOS technology; current 10.3 muA; current consumption; low voltage amplifier; size 0.18 mum; start-up circuitry; startup circuit; sub-1-V bandgap reference; transistors; CMOS integrated circuits; CMOS technology; Low voltage; MOSFETs; Photonic band gap; Temperature dependence; Threshold voltage; bandgap reference; low-voltage amplifier; multiple stable operating point; offset voltage; startup circuitry; sub-1-v;
fLanguage
English
Publisher
ieee
Conference_Titel
Anti-Counterfeiting, Security and Identification (ASID), 2011 IEEE International Conference on
Conference_Location
Xiamen
ISSN
Pending
Print_ISBN
978-1-61284-631-6
Type
conf
DOI
10.1109/ASID.2011.5967446
Filename
5967446
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