Design of CMOS inductor-less LNA with active balun

Author

Ling, Chaodong ; Lin, Lifen ; Yang, Xiao ; Huang, Weiwei

Author_Institution

Coll. of Inf. Sci. & Eng., Huaqiao Univ., Xiamen, China

fYear

2011

fDate

24-26 June 2011

Firstpage

191

Lastpage

193

Abstract

In this paper, a wide-band CMOS inductor-less low noise amplifier (LNA) with active balun is presented, in which the noise-canceling technique is exploited to reduce the thermal noise of input transistor. The LNA combining with active balun can convert the single-ended RF signal into differential signals, so off-chip balun is not needed. Furthermore, the LNA is inductorless, which can reduce chip area. The LNA is designed in TSMC 0.18μm RF CMOS process with 1.8V supply voltage. The simulation results show that the noise figure is less than 3.9dB, the input match is less than -11.7dB rang from 150MHz to 600MHz and IIP3 is 1.03dBm.

Keywords

CMOS integrated circuits; active noise control; baluns; interference suppression; low noise amplifiers; signal processing; thermal noise; transistors; wideband amplifiers; TSMC RF CMOS process; active balun; differential signal; noise canceling technique; off chip balun; single ended RF signal; size 0.18 mum; thermal noise reduce; voltage 1.8 V; wideband CMOS inductor less low noise amplifier; CMOS integrated circuits; Impedance matching; Mathematical model; Noise; Noise measurement; Thermal noise; Transistors; CMOS low noise amplifier (CMOS LNA); noise canceling technique; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Anti-Counterfeiting, Security and Identification (ASID), 2011 IEEE International Conference on

Conference_Location

Xiamen

ISSN

Pending

Print_ISBN

978-1-61284-631-6

Type

conf

DOI

10.1109/ASID.2011.5967449

Filename

5967449