Title :
Admittance spectroscopy measurements on AlInAs/GaInAs/AlInAs quantum well structures: Evidence of a deep level assisted tunneling
Author :
Ababou, S. ; Guillot, G. ; Clark, S. ; Halkias, G. ; Georgakilas, A. ; Zekentes, K. ; Stievenard, D. ; Letartre, X. ; Lannoo, M.
Author_Institution :
URA CNRS, INSA de Lyon, Villeurbanne, France
Abstract :
The authors report on admittance measurements applied to Al0.48In0.52As/Ga1-xInxAs/ Al0.48In0.5As single quantum wells grown on InP. Evidence is presented for defect assisted tunneling in these structures. The Ga1-xInxAs well is either lattice matched (x = 0.53) or lattice mismatched (x = 0.60) to Al0.48In0.52 As. To ensure that the observed conductance peak corresponds to the thermionic emission from the well above the barriers, complementary characterization of the traps lying in AlInAs layers has been performed by means of deep level transient spectroscopy and admittance measurements
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; electric admittance; electrical conductivity; gallium arsenide; indium compounds; interface states; semiconductor quantum wells; thermionic emission; tunnelling; Al0.48In0.52As-GaInAs-Al0.48In 0.52As; admittance; conductance; deep level transient spectroscopy; defect assisted tunneling; quantum wells; thermionic emission; Admittance measurement; Capacitance; Capacitance-voltage characteristics; Frequency; Gain measurement; Indium phosphide; Lattices; Spectroscopy; Thermionic emission; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380687
