Title :
In1-xGaxAs/In.53Ga.47As strained superlattices grown by gas source molecular beam epitaxy
Author :
Godefroy, A. ; Le Corre, A. ; Clérot, F. ; Caulet, J. ; Poudoulec, A. ; Salaün, S. ; Lecrosnier, D.
Author_Institution :
CNET, Lannion, France
Abstract :
Strained epitaxial heterostructures yield attractive optoelectronic properties for laser diodes and optical amplifiers. Using various characterization techniques consisting of continuous and time resolved photoluminescence, X-ray diffraction, and transmission electron microscopy, the authors demonstrate the importance of the growth temperature on the relaxation of strained superlattices (SL). By lowering the growth temperature, high quality highly strained SL layers could be obtained
Keywords :
III-V semiconductors; X-ray diffraction; deformation; electro-optical devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; time resolved spectra; transmission electron microscopy; X-ray diffraction; gas source molecular beam epitaxy; growth temperature; laser diodes; optical amplifiers; optoelectronic properties; strain relaxation; strained superlattices; time resolved photoluminescence; transmission electron microscopy; Diode lasers; Electron optics; Optical amplifiers; Optical diffraction; Optical superlattices; Photoluminescence; Semiconductor optical amplifiers; Stimulated emission; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380689
