Title :
Reactor design and improvement of uniformity in InP based OMVPE
Author :
Pelzer, B. ; Michel, W. ; Lengeling, G. ; Strauch, G. ; Schmitz, D. ; Jürgensen, H.
Author_Institution :
AIXTRON Semiconductor Technol. GmbH, Aachen, Germany
Abstract :
A single wafer reactor AIX 200/4 with improved performance for InP based materials has been developed. The AIX 200/4 reactor is a horizontal OMVPE reactor. The new designed reactor follows the widely used AIX 200 reactor. Additionally, it offers an enlarged diameter and some new features to influence the layer uniformity. The considerations derived from the planetary multiwafer reactors leading to the new reactor design are presented and the experimental results are discussed. Also it could be demonstrated, that all processes from the AIX 200 reactors can be easily transferred to this new AIX 200/4 reactor
Keywords :
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AIX 200 reactors; AIX 200/4 reactor; InP; OMVPE reactor; layer uniformity; planetary multiwafer reactors; Conductivity; Crystallization; Gallium arsenide; Indium phosphide; Inductors; Mass production; Production systems; Semiconductor materials; Steel; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380690
