Title :
Semi-insulating InP:Fe grown on Si
Author :
Schnabel, R.F. ; Heinrichsdorff, F. ; Krost, A. ; Grundmann, M. ; Wolf, T. ; Schatke, K. ; Bimberg, D. ; Pilatzek, M. ; Harde, P.
Author_Institution :
Inst. fur Festkorperphysik, Tech. Univ. Berlin, Germany
Abstract :
Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si(001) and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 × 107 Ωcm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si(001). In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed
Keywords :
III-V semiconductors; defect states; electrical resistivity; impurity distribution; indium compounds; iron; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InP:Fe; Si; chemical vapor deposition; defect density; epitaxial layers; resistivity; Annealing; Chemical vapor deposition; Circuits; Conducting materials; Frequency; Indium phosphide; Iron; Substrates; Temperature; Thermal conductivity;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380696
