DocumentCode
2500276
Title
Polarisation insensitive 1300 nm laser amplifiers employing both compressively and tensile strained quantum wells in a single active layer
Author
Teimeijer, L.F. ; Binsma, J.J.M. ; Thijs, P.J.A. ; Van Dongen, T. ; Slootweg, R.W.M. ; Jansen, E.J. ; van der Heijden, J.M.M.
Author_Institution
Philips Optoelectron. Centre, Eindhoven, Netherlands
fYear
1993
fDate
19-22 Apr 1993
Firstpage
91
Lastpage
94
Abstract
Polarization insensitive operation was obtained fro 1300 nm multiple quantum well (MQW) semiconductor amplifiers by incorporating three tensile strained and four compressively strained wells in a single active layer. By the introduction of window regions at the facets, the performance could be improved even further leading to 22 dB fiber to fiber gain for both the transverse electric (TE) and transverse magnetic (TM) polarization directions. The window regions lead to a reduction of the facet reflectivity down to a value of 3 × 10-5, while at least maintaining the high chip to fiber coupling efficiency. In addition, a record low fiber coupled noise figure of 6 dB and a fiber coupled saturation output power of 13 dBm were obtained
Keywords
laser noise; light polarisation; quantum well lasers; 1300 nm; 22 dB; 6 dB; compressively strained quantum wells; facet reflectivity; fiber coupled saturation output power; fiber to fiber gain; high chip to fiber coupling efficiency; low fiber coupled noise figure; multiple quantum well; performance; polarisation insensitive laser amplifiers; semiconductor amplifiers; single active layer; tensile strained quantum wells; transverse electric polarization; transverse magnetic polarization; window regions; Magnetic semiconductors; Operational amplifiers; Optical fiber polarization; Performance gain; Quantum well devices; Quantum well lasers; Saturation magnetization; Semiconductor lasers; Semiconductor optical amplifiers; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380702
Filename
380702
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