Title :
High gain low reflectivity travelling wave semiconductor optical amplifiers integrated with passive waveguides operating at 1.3 μm wavelength
Author :
Brenner, T. ; Ara, R. Dall ; Holtmann, Ch ; Besse, P.A. ; Melchior, H.
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
The authors report here the realization of InGaAsP/InP traveling wave optical amplifiers operating at λ = 1.3 μm integrated with passive waveguides. The fabrication is based on two stage low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) using thin etch-stop layers for easy fabrication and high reproducibility. The optical amplifiers are butt-jointed to the passive waveguides leading to high amplifier interface coupling efficiencies of over 90% and interface reflectivities below 5 × 10-6. Single pass fiber-fiber gains of +17 dB (TE) and +6 dB (TM) with high saturation output power of -3.8 dBm were achieved
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical waveguides; semiconductor growth; semiconductor lasers; travelling wave amplifiers; vapour phase epitaxial growth; 1.3 micron; 17 dB; 6 dB; InGaAsP-InP; amplifier interface coupling efficiencies; butt-jointed; fabrication; high gain; high saturation output power; interface reflectivities; passive waveguides; reflectivity; reproducibility; single pass fiber-fiber gains; thin etch-stop layers; traveling wave optical amplifiers; two stage low-pressure metalorganic vapor phase epitaxy; Indium phosphide; Integrated optics; Optical amplifiers; Optical device fabrication; Optical saturation; Optical waveguides; Reflectivity; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380703
