Experimental investigation of the thermal stability of strained InGaAs/InGaAsP MQWs

Author

Camassel, J. ; Peyre, H. ; Glew, R.W.

Author_Institution

CNRS, Univ. de Montpellier II

fYear

1993

fDate

19-22 Apr 1993

Firstpage

36

Lastpage

39

Abstract

The authors report on the optical characterization of a strained multiple quantum well (MQW) structure grown by metalorganic chemical vapor deposition (MOCVD) on a (100), heavily doped, InP substrate. Upon thermal annealing in the temperature range 650-700°C, they found that both the photoluminescence and absorption spectra exhibited a clear blue shift which can be used to deduce the kinetics of layers interdiffusion. From the analysis, it is shown that the band lineup is never ideal but, even for the as-grown sample, departs from the standard square-wells approximation. This results from finite effects of in-situ diffusion occurring during the growth

Keywords

III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; gallium compounds; indium compounds; interface states; photoluminescence; semiconductor quantum wells; spectral line shift; thermal stability; 650 to 700 degC; InGaAs-InGaAsP; InP substrate; absorption spectra; band lineup; blue shift; heavily doped; interdiffusion; metalorganic chemical vapor deposition; multiple quantum well; optical characterization; photoluminescence; square-wells approximation; strained InGaAs/InGaAsP MQWs; thermal annealing; thermal stability; Absorption; Annealing; Chemical vapor deposition; Indium phosphide; Kinetic theory; MOCVD; Photoluminescence; Quantum well devices; Temperature distribution; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380716

Filename

380716