• DocumentCode
    2500619
  • Title

    Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p--n- collector structure

  • Author

    Chau, Hin-Fai ; Pavlidis, Dimitris ; Ng, Geok-Ing ; Tomizawa, Keiichi ; Baker, D.M. ; Meaton, C. ; Tothill, J.N.

  • Author_Institution
    Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    A novel p--n- collector design is presented for InP/InGaAs heterostructure bipolar transistors (HBTs). It shows a speed advantage over conventional n- collector designs without at the same time being handicapped in terms of breakdown voltage as would normally be the case of traditional special collector designs. The speed and breakdown-speed tradeoff superiority of the p--n- HBT over the conventional designs are shown and discussed theoretically and experimentally
  • Keywords
    III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; HBTs; InP-InGaAs; breakdown voltage; collector designs; improved breakdown speed tradeoff; p--n- collector structure; single heterojunction bipolar transistor; Doping; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Notice of Violation; Solid state circuits; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380719
  • Filename
    380719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2500619