Title :
Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer
Author :
Ali, Ahmad Hadi ; Shuhaimi, Ahmad ; Hassan, Zainuriah
Author_Institution :
Nano-Optoelectron. Res. & Technol. Lab., Univ. Sains Malaysia, Minden, Malaysia
Abstract :
This paper reports on structural characterization of InGaN-based light-emitting diode (LED) with AlN/InGaN buffer layer, AlN/GaN multi layer (ML) intermediate layer and AlGaN/GaN strain layer superlattices (SLS). The LED was epitaxially grown on Si (111) by metal organic chemical vapor deposition (MOCVD) that comprises of InGaN/InGaN multi quantum-wells (MQWs) active layer sandwiched between InGaN under-layer and over-layer. Phase analysis (PA) 2Theta-scan x-ray diffraction (XRD) proved the existence of single crystal GaN (0002) and (0004) at 34.5° and 73.2°, respectively. X-ray rocking curve (XRC) phi-scan showed six-fold symmetric diffraction peaks confirming the wurtzite GaN structures with consistent angular gaps of ~60°. The red shift of E2 (high) GaN with respect to the standard value of strain-free bulk GaN denotes the presence of compressive strain in the epilayer. Surface morphology by atomic force microscope (AFM) shows a smooth surface with low RMS roughness value, thus proved a good quality of InGaN-based LED structure grown on Si.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; aluminium compounds; atomic force microscopy; elemental semiconductors; epitaxial growth; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; semiconductor superlattices; silicon; surface morphology; wide band gap semiconductors; 2Theta-scan X-ray diffraction; AlGaN-GaN; AlN-InGaN; MOCVD; Si; X-ray rocking curve phi-scan; angular gaps; atomic force microscope; buffer layer; compressive strain; epilayer; epitaxial growth; light-emitting diode; metal organic chemical vapor deposition; multilayer intermediate layer; multiquantum-wells active layer; phase analysis; red shift; six-fold symmetric diffraction peaks; strain layer superlattices; structural characterization; structural properties; surface morphology; wurtzite structures; Crystals; Gallium nitride; Light emitting diodes; Quantum well devices; Silicon; Substrates; Surface morphology;
Conference_Titel :
Photonics (ICP), 2012 IEEE 3rd International Conference on
Conference_Location :
Penang
Print_ISBN :
978-1-4673-1461-9
DOI :
10.1109/ICP.2012.6379837