Title :
Proposal of self-scanning light emitting device (SLED)
Author :
Kusuda, Y. ; Tone, K. ; Tanaka, S. ; Yamashita, K. ; Nagata, H. ; Komaba, N.
Author_Institution :
Nippon Sheet Glass Co. Ltd., Ibaraki, Japan
Abstract :
A novel functional optoelectronic device, the self-scanning light-emitting device (SLED), is proposed. The SLED consists of light-emitting thyristors whose turn-on voltages interact with each other, and the light-emitting element is automatically transferred by input clock pulses. GaAs SLED operation was demonstrated using four phase transfer clock pulses, and a maximum transfer rate of 3 MHz was obtained. It is suggested that the SLED is promising for optical computing and optical interconnection technology with high-density integration.<>
Keywords :
III-V semiconductors; gallium arsenide; light emitting devices; optoelectronic devices; thyristors; 3 MHz; GaAs; SLED; four phase transfer clock pulses; high-density integration; light-emitting thyristors; maximum transfer rate; operation; optical computing; optical interconnection technology; optoelectronic device; self-scanning light emitting device; semiconductors; thyristor arrays; turn-on voltages interact with each other; Cathodes; Clocks; Optical modulation; Optical pulse generation; Optical pulses; Proposals; Shift registers; Stimulated emission; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74186
