MOCVD growth of optoelectronic integrated circuits

Author

Koren, U.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

855

Lastpage

856

Abstract

Summary form only given. The use of advanced crystal growth technology for realization of photonic integrated circuits containing active and passive optical elements on InP substrates is discussed. This technology has been used to develop a wavelength division multiplexing light source and a tunable laser integrated with a directional coupler optical switch. Diagrams of these two devices are provided.<>

Keywords

III-V semiconductors; frequency division multiplexing; indium compounds; integrated optoelectronics; optical couplers; optical switches; semiconductor junction lasers; vapour phase epitaxial growth; InP substrates; MOCVD growth; OEIC; active optical elements; crystal growth technology; directional coupler optical switch; optoelectronic integrated circuits; passive optical elements; photonic integrated circuits; semiconductors; tunable laser; wavelength division multiplexing light source; Directional couplers; Indium phosphide; Integrated circuit technology; Integrated optics; Light sources; MOCVD; Photonic crystals; Photonic integrated circuits; Tunable circuits and devices; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74187

Filename

74187