Title :
MOCVD growth of optoelectronic integrated circuits
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Summary form only given. The use of advanced crystal growth technology for realization of photonic integrated circuits containing active and passive optical elements on InP substrates is discussed. This technology has been used to develop a wavelength division multiplexing light source and a tunable laser integrated with a directional coupler optical switch. Diagrams of these two devices are provided.<>
Keywords :
III-V semiconductors; frequency division multiplexing; indium compounds; integrated optoelectronics; optical couplers; optical switches; semiconductor junction lasers; vapour phase epitaxial growth; InP substrates; MOCVD growth; OEIC; active optical elements; crystal growth technology; directional coupler optical switch; optoelectronic integrated circuits; passive optical elements; photonic integrated circuits; semiconductors; tunable laser; wavelength division multiplexing light source; Directional couplers; Indium phosphide; Integrated circuit technology; Integrated optics; Light sources; MOCVD; Photonic crystals; Photonic integrated circuits; Tunable circuits and devices; Wavelength division multiplexing;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74187
