Title :
The state of the art of electrostatic discharge protection: physics, technology, circuits, design, simulation and scaling
Author :
Voldman, Steven H.
Author_Institution :
Semicond. R&D Center, IBM Corp., Essex Junction, VT, USA
Abstract :
This paper discusses state of the art electrostatic discharge (ESD) protection in advanced semiconductor technologies and emerging technologies. ESD physics, semiconductor process issues, device and circuit simulation, circuits, and devices are examined
Keywords :
electrostatic discharge; integrated circuit design; integrated circuit technology; integrated circuit testing; monolithic integrated circuits; protection; reviews; silicon-on-insulator; ESD physics; ESD protection; ESD testing; IC scaling; SOI; Si; advanced semiconductor technologies; circuit simulation; device simulation; electrostatic discharge protection; semiconductor process issues; Circuit simulation; Electrostatic discharge; Frequency; MOSFETs; Physics; Protection; Space vector pulse width modulation; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741871
