Title :
Low threshold current density grating-surface-emitting lasers by OMVPE
Author :
Bour, D.P. ; Carlson, N.W. ; Evans, G.A. ; Liew, S.K.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
Grating-surface-emitting (GSE) lasers and laser arrays have been fabricated using InGaAs-AlGaAs and GaAs-AlGaAs material grown by organometallic vapor-phase epitaxy (OMVPE). The threshold behavior of GSEs with various Bragg wavelengths ( lambda /sub B/) near the gain peak is examined. Lowest thresholds are obtained when the grating is strong, and when lambda /sub B/ is set slightly above (by approximately 100 AA) the n=1 e-hh transition, due to lower absorption loss in the passive reflector. Alternatively, absorption losses are great in devices with lambda /sub B/ shorter than the gain peak. In this case, thresholds can be high; in GSE arrays, such an intracavity loss can lead to fast-switching behavior.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor laser arrays; vapour phase epitaxial growth; Bragg wavelengths; GaAs-AlGaAs; InGaAs-AlGaAs; OMVPE; absorption losses; fast-switching behavior; grating-surface-emitting lasers; intracavity loss; laser arrays; low threshold current density; organometallic vapor-phase epitaxy; semiconductors; threshold behavior; Absorption; Dielectric substrates; Distributed Bragg reflectors; Gratings; Laser feedback; Optical arrays; Optical materials; Phased arrays; Surface emitting lasers; Threshold current;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74188
