DocumentCode :
2501961
Title :
Turn-off performance comparison of self-firing MOS-thyristor devices for ZVS applications
Author :
Breil, M. ; Sanchez, J.L. ; Austin, P. ; Laur, J.-P.
Author_Institution :
Lab. d´´Anal. & d´´Archit. des Syst., CNRS, Toulouse, France
fYear :
1998
fDate :
27-29 Sep 1998
Firstpage :
53
Lastpage :
56
Abstract :
In this paper, design aspects of two self-firing MOS-thyristor associations are given in order to optimize their turn-off performance. For each structure, the investigation is based on an analytical model and 2D simulations using PISCES. Electrical characterization results of fabricated test structures are presented
Keywords :
MOS-controlled thyristors; power semiconductor switches; semiconductor device models; 2D simulations; PISCES; ZVS applications; analytical model; design aspects; electrical characterization results; self-firing MOS-thyristor devices; test structures; turnoff performance comparison; zero voltage switching mode; Analytical models; Anodes; Cathodes; Design optimization; Electrons; Insulated gate bipolar transistors; MOSFET circuits; Switches; Thyristors; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-4497-9
Type :
conf
DOI :
10.1109/BIPOL.1998.741880
Filename :
741880
Link To Document :
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