Title :
A comprehensive vertical BJT mismatch model
Author :
Drennan, Patrick G. ; McAndrew, Colin C. ; Bates, John
Abstract :
This paper presents a comprehensive mismatch model for vertical BJTs, valid over bias, geometry, and temperature. Mismatches in gain and collector and base currents are modeled based on the physical process and geometry dependence of SPICE Gummel-Poon model parameters
Keywords :
bipolar transistors; semiconductor device models; SPICE Gummel-Poon model parameters; base currents; collector currents; gain; geometry dependence; vertical BJT mismatch model; Analog integrated circuits; Geometry; Integrated circuit modeling; Manufacturing; Mirrors; Radio frequency; Radiofrequency integrated circuits; SPICE; Semiconductor process modeling; Solid modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741885
