SiGe and GaAs as competitive technologies for RF-applications

Author

König, Ulf

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

fYear

1998

fDate

27-29 Sep 1998

Firstpage

87

Lastpage

92

Abstract

The status of SiGe HBTs is reviewed and related to III/V HBTs and HFETs. Figures of merit considered are DC performance (gains, Gummel plot), frequencies (f_T, f_max), noise (F_min, f_C), and power aspects (PAE). Criteria for a further optimization of SiGe HBTs (layer parameters, layout rules, technologies) are pointed out

Keywords

Ge-Si alloys; III-V semiconductors; MMIC; UHF bipolar transistors; UHF field effect transistors; UHF integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; integrated circuit technology; microwave bipolar transistors; microwave field effect transistors; semiconductor device noise; semiconductor materials; DC performance; GaAs; GaAs technologies; III-V HBTs; III-V HFETs; PAE; RF applications; SiGe; SiGe HBTs; SiGe technologies; figures of merit; layer parameters; layout rules; noise; power added efficiency; Delay; Frequency; Gallium arsenide; Germanium silicon alloys; HEMTs; Linearity; MODFETs; Noise figure; Presence network agents; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741886

Filename

741886