A high performance low complexity SiGe HBT for BiCMOS integration

Author

Chantre, A. ; Marty, M. ; Regolini, J.L. ; Mouis, M. ; de Pontcharra, J. ; Dutartre, D. ; Morin, C. ; Gloria, D. ; Jouan, S. ; Pante, R. ; Laurens, M. ; Monroy, A.

Author_Institution

CNET, Meylan, France

fYear

1998

fDate

27-29 Sep 1998

Firstpage

93

Lastpage

96

Abstract

A low complexity 0.35 μm SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (f_max up to 71 GHz) are obtained, opening the way to a highly manufacturable SiGe BiCMOS technology

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; 0.35 micron; 71 GHz; BiCMOS integration; Si-SiGe; high frequency performance; low complexity SiGe HBT technology; manufacturable BiCMOS technology; nonselective Si/SiGe epitaxial base; quasi self-aligned emitter/base structure; submicron HBT technology; BiCMOS integrated circuits; Cutoff frequency; Electrodes; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing; Metallization; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741887

Filename

741887