Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process

Author

Laney, David C. ; Larson, Lawrence E. ; Malinowski, John ; Harame, David ; Subbanna, Seshadri ; Volant, Rich ; Case, Michael ; Chan, Paul

Author_Institution

California Univ., San Diego, La Jolla, CA, USA

fYear

1998

fDate

27-29 Sep 1998

Firstpage

101

Lastpage

104

Abstract

Experimental results are presented on a set of microwave transmission line structures and planar inductors fabricated on a thick polyimide dielectric in a production Si/SiGe HBT technology using standard metallization. Microstrip transmission lines with characteristic impedances between 44-73 ohms, with losses at 10 GHz of 0.15 dB/mm and Q´s between 10-14 are presented. Inductances between 0.5-15 nH with Q´s up to 22 are also presented

Keywords

Ge-Si alloys; bipolar MMIC; heterojunction bipolar transistors; inductors; integrated circuit technology; losses; microstrip circuits; microstrip lines; silicon; 10 GHz; Si-SiGe; Si/SiGe HBT process; low-loss microwave transmission lines; low-loss planar inductors; production HBT technology; standard metallization; thick polyimide dielectric; Dielectrics; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Microwave technology; Planar transmission lines; Polyimides; Production; Silicon germanium; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741889

Filename

741889